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    • 专利摘要:
    A memory array comprising: a plurality of volatile memory cells (202) each including a flip-flop (206, 208); and a plurality of nonvolatile memory cells (204) each comprising at least one resistive element (218) programmable by the direction of a current passed therethrough to assume at least two resistive states (Rmin, Rmax), each of the non-volatile memory cells being associated with a corresponding one of the volatile memory cells.
    公开号:FR3016465A1
    申请号:FR1450196
    申请日:2014-01-10
    公开日:2015-07-17
    发明作者:Virgile Javerliac；Christophe Layer
    申请人:Centre National de la Recherche Scientifique CNRS；Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] B13003 - BD14824 - D106607-01 1 MEMORY HAVING VOLATILE AND NONVOLATILE MEMORY CELLS ASSOCIATED Domain The present description relates to the field of memory networks, and in particular to a memory network combining a storage of volatile data and non-volatile data. BACKGROUND It has already been proposed to use programmable resistive elements in memory cells to ensure nonvolatile data storage. Such resistive elements are programmable to take one of two different resistive states. The programmed resistive state is maintained even when a supply voltage of the memory cell is disconnected, and thus data can be stored by such elements in a non-volatile manner.
    [0002] Various types of resistive elements have been proposed, some of which are capable of being programmed by the direction of a current passed through the resistive element. An example of such a current-programmable resistive element is an STT (Spi Transfer Torque) element, which is based on magnetic tunnel junctions (MTJs).
    [0003] B13003 - BD14824 - D106607-01 2 A difficulty in using resistive elements for data storage is that the read and write operations tend to be relatively slow, resulting in high access time by compared to a standard volatile memory such as SRAM (Random Access Random Access Memory). To solve this problem, it has been proposed to provide, in each memory cell, a circuit for programming the state of the resistive element and for reading, amplifying and memorizing a programmed resistive state. However, although such a solution leads to improved access times, the area used by each memory cell and the power consumption tend to be high. There is therefore a need in the art for a nonvolatile memory array having relatively low access times and / or a reduced area compared to existing nonvolatile memories. SUMMARY An object of embodiments of the present disclosure is to at least partially solve one or more needs of the prior art. In one aspect, there is provided a memory array comprising: a plurality of volatile memory cells each including a flip-flop; and a plurality of non-volatile memory cells each comprising at least one resistive element programmable by the direction of a current being passed therethrough to take one of at least two resistive states, each of the cells of non-volatile memory being associated with a corresponding one of the volatile memory cells. According to one embodiment, the memory array further comprises a read / write circuit comprising a comparator adapted to read a data signal stored by each of the volatile and nonvolatile memory cells. According to one embodiment, the read / write circuit is coupled to each of the volatile and nonvolatile memory cells via one or more pairs of bit lines. According to one embodiment, the read / write circuit is adapted to perform at least one of the following 5 operations: read a first bit of data stored by a first of the volatile memory cells and program, based on the first bit of data, the resistive state of a first of the non-volatile memory cells associated with the first volatile memory cell; and reading in a second nonvolatile memory cell, a programmed resistive state representing a second data bit and writing the second data bit in a second of the volatile memory cells associated with the second nonvolatile memory cell. According to one embodiment, the comparator comprises first and second inputs, and the read / write circuit further comprises: at least one multiplexer adapted to couple the first and second inputs of the comparator to memory nodes complementary to the first one; volatile memory cell for reading the first data bit, and coupling the first and second comparator inputs to outputs of an amplifier adapted to detect the programmed resistive state of the second nonvolatile memory cell. According to one embodiment, the read / write circuit further comprises: a write circuit 25 adapted to write a data bit in a first of the volatile memory cells by applying a voltage between memory nodes complementary to the first one; volatile memory cell and programming a resistive state of a first non-volatile memory cells by passing a current 30 in the resistive element of the first non-volatile memory cell. According to one embodiment, the memory array further comprises a plurality of selection lines, and each of the volatile memory cells and its associated nonvolatile memory cell is coupled to the same selection line. of the memory matrix. According to one embodiment, each of the volatile memory cells and its associated non-volatile memory cell 5 are coupled to the same pair of bit lines. According to one embodiment, each of the volatile memory cells is coupled to a first pair of bit lines and each of the non-volatile memory cells is coupled to a second pair of bit lines. According to one embodiment, each of the volatile memory cells is coupled to a supply voltage rail coupled via a switch to a supply voltage level. According to one embodiment, each of the nonvolatile memory cells comprises a single resistive element coupled in series with a first transistor between a pair of bit lines. According to one embodiment, each of the non-volatile memory cells comprises: a first resistive element 20 coupled in series with a first transistor between a first bit line and a first supply voltage; and a second resistive element coupled in series with a second transistor between a second bit line and the first supply voltage. According to one embodiment, said at least one resistive element of each of the non-volatile memory cells is of one of the following types: a spin transfer torque element having anisotropy in the plane; a spin transfer torque element having anisotropy perpendicular to the plane; and a redox element. In another aspect, there is provided a method of backing up data in the aforementioned memory array, the method comprising: reading a first data bit stored by a first one of the volatile memory cells; and programming the resistive state of a first one of the non-volatile memory cells associated with the first volatile memory cell based on the first data bit. In another aspect, there is provided a method of restoring data in the aforementioned memory array, the method comprising: reading in a second nonvolatile memory cell a programmed resistive state representing a second data bit; and writing the second data bit into a second one of the volatile memory cells associated with the second nonvolatile memory cell.
    [0004] BRIEF DESCRIPTION OF THE DRAWINGS The above-mentioned and other features and advantages will be apparent from the following detailed description of embodiments, given by way of illustration and not limitation, with reference to the accompanying drawings, in which: Figure 1 schematically illustrates an example of a nonvolatile flip-flop; Figure 2 schematically illustrates a portion of a nonvolatile / volatile memory array according to an exemplary embodiment; FIG. 3 schematically illustrates a non-volatile memory cell according to an exemplary embodiment; FIG. 4 schematically illustrates part of a nonvolatile / volatile memory according to another exemplary embodiment; FIGS. 5A to 5F schematically illustrate nonvolatile / volatile memory matrices according to exemplary embodiments; Figure 6 schematically illustrates a volatile memory cell in more detail according to an exemplary embodiment; FIG. 7A schematically illustrates a nonvolatile / volatile memory matrix according to an exemplary embodiment of the present description; B13003 - BD14824 - D106607-01 6 Figure 7B schematically illustrates a column multiplexer of the memory array of Figure 7A in more detail according to an exemplary embodiment; and FIG. 8 is a timing diagram showing exemplary signals in the memory array of FIG. 7A according to an exemplary embodiment. Detailed Description In the following description, the term "connected" is used to refer to a direct connection between one element and another, while the term "coupled" implies that the connection between the two elements may be direct, or through an intermediate element, such as a transistor, resistor or other component. Figure 1 substantially reproduces Figure 7 of the publication "Spin-MTJ based Non-Volatile Flip-Flop", Weisheng Zhao et al., Proceedings of the 7th IEEE International Conference on Nanotechnology, August 2-5, 2007, Hong -Kong. The flip-flop 100 shown in FIG. 1 comprises a master register and a slave register (SLAVE REGISTER). The master register comprises magnetic tunnel junction devices MTJ1 and MTJO, programmable by the direction of a current passed therethrough. The MTJ1 device is connected between an intermediate node 104 and an interconnection node 102. The MTJO device is connected between an intermediate node 106 and the interconnection node 102. The interconnection node 102 connects MTJ MTJO devices with one another. and MTJ1. The intermediate node 104 is further coupled to a supply voltage Vdd through a pair of series-coupled transistors MN1 and MP1 forming a first inverter. The intermediate node 106 is further coupled to the supply voltage Vdd via a pair of MPO and MNO transistors coupled in series and forming a second inverter. The first and second inverters are cross-coupled thereto, and the output of the second inverter B13003 - BD14824 - D106607-01 7 is connected to the slave register. A transistor MN2 is coupled between the gate nodes of the transistors MN1 and MNO. An MN5 transistor is coupled between the intermediate node 104 and the supply voltage Vdd, and a transistor MN6 is coupled between the intermediate node 104 and the ground. In addition, a transistor MN3 is coupled between the intermediate node 106 and the supply voltage Vdd, and a transistor MN4 is coupled between the intermediate node 106 and the ground. An MN7 transistor is coupled between the intermediate node 102 and the ground. The transistors MN3 to MN6 allow a current to flow through the resistive elements MTJ1 and MTJO in one direction or the other in order to program the resistive states of the MTJ devices. During this programming phase, the transistor MN7 is used to disconnect the node 102 from the ground. Two non-OR gates and an inverter on the left side of FIG. 1, which are controlled by an input signal INPUT, a clock signal Clk and an activation signal EN, generate signals to control the signals. transistors MN3 to MN6. When the transistor MN7 is turned on, the transistors MPO, MP1, MNO and MN1 form a sense amplifier for reading the states of the MTJO and MTJ1 elements. The memory cell forming the master register of Figure 1 is not suitable for use in a memory array in view of its relatively high number of transistors. In addition, the transistors constituting the sense amplifier are relatively large, since they must be capable of passing a current sufficient to allow the resistive states of the MTJO and MTJ1 elements to be detected. FIG. 2 diagrammatically illustrates a circuit 200 associated with a column of a nonvolatile / volatile combined memory array according to an exemplary embodiment of the present description. The circuit 200 comprises a volatile memory cell 202, and a nonvolatile memory cell 204 associated with the volatile memory cell 202. As will be apparent in the following, the volatile memory cells will be clearly visible. and non-volatile are associated with each other in that, at least a certain portion of the time, the non-volatile memory cell stores a backup of a data bit held by the volatile memory cell, and can be used to restore this bit of data in the volatile memory cell. In the example of FIG. 2, the memory cells 202, 204 are coupled between the same pair of bit lines BL, BLB. Although FIG. 2 illustrates a single volatile memory cell and a single nonvolatile memory cell, the column may comprise any number of volatile cells and associated nonvolatile cells coupled between the BL and BLB bit lines. In addition, although only one column is illustrated in FIG. 2, the memory array may comprise any number of columns of the type shown in FIG. 2, each having a corresponding read / write circuit. The volatile memory cell 202 is for example an SRAM cell (static random access memory), comprising a flip-flop formed by two inverters 206, 208 cross-coupled between storage nodes 210, 212. A transistor 214, which is For example, a PMOS transistor couples the storage node 210 to the bit line BL. A transistor 216 which is also for example a PMOS transistor, couples the storage node 212 to the bit line BLB. Transistors 214 and 216 are for example controlled by a row selection line WL1 of the memory array. The non-volatile memory cell 204 comprises for example a programmable resistive element 218 cdUplé in series with a transistor 220, which is for example a PMOS transistor, between the bit lines BL and BL1. The transistor 220 is for example controlled by a row selection line WL2 of the memory array. The resistive element 218 is, for example, a resistance conversion element of any type for which the resistance is programmable by the direction of a current passed through it. The resistive element 218 is for example an STT (spin torque transfer) element having anisotropy in the plane or perpendicular to the plane, as described in more detail in the publication entitled "Magnonic spintransfer torque MRAM with low power, high speed, and error-free switching ", N.Mojumder et al., IEDM Tech. Digest (2010), and in the publication entitled "Electric toggling of magnets", E. Tsymbal, Natural Materials Vol 11, January 2012. As an alternative, the resistive elements could be those used in resistor switching memories. . RAM type RedOx (redox RAM), which are for example described in more detail in the publication entitled "Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects and Challenges", Rainer Waser et al., Advanced Materials 2009, 21, 15 For example, regardless of the type of resistive element, for example, a data bit is stored in a nonvolatile manner by programming the element so as to have either a relatively high resistance (Rmax) or a relatively low resistance. (Rmin). The resistive element 218 for example has only two resistive states corresponding to the high and low resistors Rmax and Rmin, but the exact values of Rmin and Rmax can vary depending on conditions such as the manufacturing process, the materials, the temperature variations, etc. The resistive element 218 is for example chosen so that the resistance R x is always significantly greater than Rmin, for example greater than at least 20 percent. In general, the ratio between the resistance Rmax and the resistance Rmin is for example between 1.2 and 10000. Rmin is for example of the order of 2 kilo-ohms or less, and Rmax is for example of the order 6 kilo-ohms or more, although many other values are possible. The bit lines BL and BLB are coupled to a read / write circuit (READ / WRITE) 222. A control circuit 224 provides control signals on a line 226 to the B13003 - BD14824 - D106607-01 10 circuit. read / write 222, and selection lines WL1 and WL2. The read / write circuit 222 is capable of reading a data bit in the volatile memory cell 202, for example by pre-charging the BL and BLB bit lines with a high voltage, and detecting a voltage drop on the one or the other of the bits when the signal WL1 is activated by the control circuit 224. The read / write circuit 222 is also capable of reading a data bit in the nonvolatile memory cell 204, for example by applying a voltage between the bit lines BL, BLB while the signal WL2 is activated by the control circuit 224, in order to generate a current in the resistive element 218. The level of this current is for example compared to a reference current to determine the programmed resistive state of the element 218. The data read from the non-volatile memory cell 202 or the volatile memory cell 204 may be provided as a signal q at an output of the reading circuit / writing 222, and / or written in one of the volatile or nonvolatile memory cells during a backup or restoration phase, as will be explained in more detail. The read / write circuit 222 is capable of writing a data bit into the nonvolatile memory cell 204 via bit lines BL and BLB. This datum can be an external datum dext supplied to the read / write circuit 222 from an external circuit, or an internal datum read in the other memory cells, for example the volatile memory cell 202. For example, during a phase data backup, a data bit is read by the read / write circuit 222 in the volatile memory cell 202, and is written to the non-volatile memory cell 204. The write operation involves the application by the read / write circuit 222 of a high voltage on the bit line BL and a low voltage on the bit line BLB, or vice versa, depending on the data to be written. The control circuit 224 then activates the signal WL2 to activate the transistor 220, so that a write current flows in one direction or the other through the resistive element 218 for program its state. The read / write circuit 222 is also capable of writing a data bit into the volatile memory cell 202 via bit lines BL and BLB. Here again, this datum can be an external datum supplied to the read / write circuit 222, or an internal datum read in one of the other memory cells, for example the non-volatile memory cell 202. For example, during a phase of restoration, a bit of data is read by the read / write circuit 222 in the non-volatile memory cell 204, and is written in the volatile memory cell 202. The write operation involves the application by the circuit of read / write 222 of a high voltage on the bit line BL and a low voltage on the bit line BLB, or vice versa, depending on the data to be written. The control circuit 224 then activates the signal WL1, for example at a low level, to activate the transistors 214, 216, so that the latch formed by the inverters 206, 208 is programmed on the basis of the voltages on the lines bit BL, BLB. Although FIG. 2 represents an example of the circuits forming the volatile and nonvolatile memory cells 202, 204, it will be clear to one skilled in the art that in alternative embodiments different circuits could be used. FIG. 3 illustrates the non-volatile memory cell 204 according to an alternative embodiment with respect to that represented in FIG. 2. In particular, rather than including a single resistive element 218, the circuit of FIG. 3 comprises two resistive elements 218A, 218B. The element 218A is coupled in series with a transistor 220A, which is for example a PMOS transistor, between the bit line BL and an intermediate supply voltage VI. Similarly, the element 218B is coupled in series with a transistor 220B, which is, for example, a PMOS transistor, between the bit line BLB and the intermediate supply voltage V1. For example, the resistive elements 218A and 218B each have one of their nodes coupled to the voltage V1, and the other node coupled to the corresponding bit line. As will be described in more detail below, the intermediate supply voltage VI is for example equal to or close to half the value of the supply voltage VDD. Transistors 220A, 220B are for example controlled by the selection line WL2.
    [0005] The non-volatile data bit represented by the resistive elements 218A, 218B depends on which of the resistive elements has the resistance Rmax or Rmin, in other words the relative resistances. The values of Rmax and Rmin are for example the same as for the resistive element 218 of Figure 2 described above. In FIG. 3, the resistive element 218A is shown programmed to have a resistance Rmin and the element 218B a resistor Rmax, and as represented by the references Rmax and Rmin in parentheses, the opposite programming of the resistance values would be possible.
    [0006] In operation, the read / write circuit 222 of Fig. 2 writes to the nonvolatile memory cell 204 of Fig. 3 in the same manner as previously described in connection with Fig. 2, applying a high voltage to one of the bit lines and a low voltage to the other bit line, and activating the signal WL2 to cause the passage of a current in each of the resistive elements 218A, 218B. The high voltage being for example at a VDD level between 2 and 3 V, and the intermediate voltage being about VDD / 2, for example between 1 and 1.5 V, a current will flow in each of the resistive elements 218A, 218B in a different direction depending on the voltage applied to the corresponding bit line. The read / write circuit 222 reads the relative resistive state of the resistive elements 218A, 218B by applying a voltage, for example the supply voltage VDD or the ground, to each of the lines of the resistive elements 218A, 218B. bit BL, BLB, while the signal WL2 is activated, then comparing, using a comparator, the level of the current flowing to or from each bit line.
    [0007] FIG. 4 schematically illustrates a circuit 400 associated with a column of a non-volatile / volatile memory matrix according to another embodiment of the present description. The circuit 400 is very similar to that of Figure 2 and the same elements have the same references and will not be described again in detail. However, in FIG. 4, the volatile memory cell 202 is coupled between a first pair of bit lines BL1, BL1B, and the nonvolatile memory cell 204 is coupled between a second pair of bit lines BL2, BLB2. Thus, the read / write circuit 222 accesses a data item stored by the volatile memory cell 202 via the bit lines BL1, BL1B, and a piece of data stored by the nonvolatile memory cell 204 via the data lines. bit BL2, BL2B.
    [0008] The transistors 214, 216 of the volatile memory cell are controlled by the selection line WL1, and the transistor 220 of the non-volatile memory cell 204 can be controlled by a different selection line WL2 as in the circuit of FIG. , or by the same selection line WL1 as the memory cell 202. In the latter case, the backup or restore operation previously described between the memory cells 202, 204 can be performed by activating only the control signal WL1. Although not shown in FIG. 4, there may be other nonvolatile memory cells coupled between bit lines BL1, BL1B and other associated nonvolatile memory cells coupled between bit lines BL2, BL2B. In addition, the nonvolatile memory cell 204 of FIG. 4 could alternatively be implemented by the circuit of FIG. 3, the transistors 220A, 220B being coupled to the bit lines BL2, BL2B. FIGS. 5A to 5F schematically represent arrangements of volatile and non-volatile memory cells in memory matrices 502 according to exemplary embodiments of the present description. In these figures, the empty squares represent volatile memory cells 202, and the diagonally hatched squares represent non-volatile memory cells 204. A row control circuit 504 generates the control signals to control the selection lines WL1, WL2 of the network memory cells, and a read / write block 506 reads and writes to the memory cells of the network. For ease of illustration, FIGS. 5A to 5F illustrate memory matrices 502 comprising only 32 volatile memory cells 202 and 32 non-volatile memory cells 204. In alternative embodiments, there could be any number of memory cells. volatile and non-volatile. In FIG. 5A, the memory array 502 comprises alternating rows of volatile memory cells 202 and nonvolatile memory cells 204. Each volatile memory cell 202 is for example vertically adjacent to its associated nonvolatile memory cell 204. In each column, the memory cells share a common pair of bit lines, as in the embodiment of Figure 2.
    [0009] In FIG. 5B, the memory array 502 comprises alternating columns of volatile memory cells 202 and nonvolatile memory cells 204. Each volatile memory cell 202 is for example horizontally adjacent to its associated nonvolatile memory cell 204. Thus, the volatile and non-volatile memory cells do not share pairs of bit lines, this embodiment being similar to that of FIG. 4. Also, as in the embodiment of FIG. 4, the volatile memory cells and nonvolatile 202, 204 in each row may or may not share a common row selection line.
    [0010] In FIG. 5C, the memory array 502 is similar to that of FIG. 5A, comprising rows of volatile memory cells 202, and rows of nonvolatile memory cells 204. However, rather than there are alternate rows of volatile and non-volatile memory cells, the rows of volatile memory cells 202 are grouped together, and the rows of nonvolatile memory cells 204 are grouped together, each group having two rows in the example of Figure 5C. Thus, each volatile memory cell 202 is no longer adjacent to its associated non-volatile memory cell 204. In FIG. 5D, the memory array 502 is similar to that of FIG. 5B, comprising volatile memory cell columns 202 and nonvolatile memory cell columns 204. However, rather than there are alternate columns of In the volatile and nonvolatile memory cells, the volatile memory cell columns 202 are grouped together, and the nonvolatile memory cell columns 204 are grouped, each group having four columns in the example of Fig. 5D. Thus, volatile memory 202 is no longer associated non-volatile memory 204. In FIG. 5E, the matrix of the matrix of FIG. 5D, except for volatile memory 202, again here form each cell adjacent to its memory cell 502 is similar to that of the cell columns 508A of memory cells, and the columns nonvolatile cells 204 form another bank 508B of memory cells. For example, the banks 508A, 508B are physically separated by the row control circuit 504, and each row of volatile memory cells 202 of the bank 508A may or may not share a common row selection line with a corresponding row of row cells 504A. non-volatile memory 204 of bank 508B. Each bank 508A, 508B is for example associated with a corresponding read / write block 506A, 506B.
    [0011] In FIG. 5F, the memory array 502 is similar to the array of FIG. 5C, except that the volatile memory cell arrays 202 form a bank 510A of memory cells, and the cell arrays 251. nonvolatile memory 204 5 form another bank 510B memory cells. The banks 510A, 510B are, for example, physically separated by the read / write block 506. For example, the volatile memory cell columns 202 of the bank 510A do not share common bit lines with the non-memory cell columns. volatile 204 of the bank 510B. Figure 6 illustrates the volatile memory cells 202 in more detail according to an exemplary embodiment. Inverter 206, for example, consists of a PMOS transistor 602 and an NMOS transistor 604 coupled in series between a supply node 605 and the ground. The control nodes of the transistors 602, 604 are coupled to the storage node 210, and an intermediate node between these transistors constitutes the storage node 212. Similarly, the inverter 208 consists for example of a PMOS transistor 606 and of an NMOS transistor 608 coupled in series between the supply node 605 and the ground. The control nodes of the transistors 606, 608 are coupled to the storage node 212, and an intermediate node between these transistors constitutes the storage node 210. The supply node 605 is for example coupled to a voltage supply rail 610, which in turn is coupled to a supply voltage VDD via a PMOS transistor 612 controlled by a sleep signal SLEEP. The supply rail 610 feeds, for example, all the volatile memory cells of the column, and so by turning off the transistor 612, the volatile memory cells can have their power cut off to save power. In particular, before going into the sleep mode, the data from each of the volatile memory cells 202 is for example saved in their associated nonvolatile memory cells 204, and then the volatile memory cells B13003 - BD14824 - D106607- 01 17 have their power off by disabling the transistor 612. At the end of the sleep period, the transistor 612 is for example activated to supply the volatile memory cells 202, and the data stored by each of the nonvolatile memory cells 204 are for example restored in their associated volatile memory cells. FIG. 7A schematically illustrates a memory device comprising the circuit 200 of FIG. 2 according to an exemplary embodiment. The manner in which this device could be adapted to operate on the basis of the memory cells of FIG. 3 or 4 will be clear to one skilled in the art. Two COLO and COL1 columns are illustrated in FIG. 7, and two volatile memory cells 202 and two non-volatile memory cells 204 are illustrated in each column, although in alternative embodiments there may be any number of columns and one any number of memory cells in each column. The read / write circuit comprises a read / write module 702, and a column multiplexer (Mux pass) 704 associated with each column. Thus, in the embodiment of FIG. 7A, the read / write module 702 is associated with several columns of the memory array. In alternative embodiments, a separate read / write module 702 could be provided for each column of the array.
    [0012] FIG. 7B illustrates in more detail one of the column multiplexers 704 according to an exemplary embodiment. With reference to both FIGS. 7A and 7B, the column multiplexer 704 of the COLO column selectively couples the bit lines BL, BLB respectively to complementary write lines wd1 and nwd1 when a write signal wdec0 of the column COLO is enabled; at a supply voltage VDD for preloading the bit lines before a volatile cell is read when a blprechn precharge signal is activated; B13003 - BD14824 - D106607-01 18 complementary volatile cell read lines rsrdl, nrsrdl, when a volatile read signal rsrdec0 of the column COLO is activated; and a non-volatile read line rsttrdl and a read voltage level, for example ground, when the non-volatile read signal rsttdec0 is enabled. The column multiplexer 704 comprises, for example: two PMOS transistors controlled by the signal blprechn for respectively coupling the bit lines BL and BLB to the supply voltage VDD; two NMOS transistors controlled by the signal wdec for respectively coupling the bit lines BL and BLB to the write lines wd1 and nwdl; two NMOS transistors controlled by the signal rsrdec 15 for respectively coupling the bit lines. BL and BLB at the volatile reading lines rsrdl and nrsrdl; and two NMOS transistors controlled by the signal rsttdec for respectively coupling the bit lines BL and BLB to the non-volatile reading line rsttrdl and the mass. Referring again to FIG. 7A, the read / write module 702 comprises a write circuit 706, which generates voltages to be applied to the bit lines of a selected column based on a signal of wrt write from the control block 224, and a data signal d from a data multiplexer 708. The data multiplexer 708 selects either the external dext data received from outside the memory array, or the internal dint data read from the memory cell of the array, based on a backup / restore svrte signal. The read / write module 702 also includes a comparator (Comp) 710, having positive and negative inputs respectively coupled to the volatile cell read lines nrsrdl and rsrdl. An output of the comparator 710 is coupled to a data latch (Latch) 712, which in turn provides the internal data signal dint. The comparator 710 and B13003 - BD14824 - D106607-01 19 flip-flop 712 each receive a synchronization signal campe. The internal data signal dint is provided via an output buffer 713 in the form of the output data signal q of the read / write module 702.
    [0013] The non-volatile cell read line rsttrdl is coupled to a clamping circuit (clamp) 714, which applies a voltage level to the line rsttrdl to generate a current in the resistive element of a non-memory cell. selected volatile 204. Similarly, the voltage clamping circuit 714 also applies, for example, a voltage to a reference line refsttrd1 coupled to a reference device (not shown) so that a reference current is generated. The reference device has, for example, a resistance equal to (Rmax + Rmin) / 2, so that the reference current provides a cut-off level to determine whether the resistive element has a programmed resistance Rmin or Rmax- The currents generated by the voltage clamping circuit 714 is converted into voltage levels and amplified by an amplifier 716. The voltage clamping circuit 714 and the amplifier 716 receive, for example, a synchronization signal ampe. Amplifier 716 provides differential voltage outputs, which in turn are coupled via switches 718 to the inputs of comparator 710. Switches 718 are controlled by a nonvolatile read control signal from the resistor block. 224. A row decoder 720 is for example associated with each pair of volatile / non-volatile rows of the memory array. The row decoder 720 receives a row address, and when the address corresponds to the address of the row, activates the corresponding row control signal WL1 when a volatile row selection signal wlsrame is activated, or activates the row row signal WL1. corresponding row command signal WL2 when a non-volatile row selection signal wlsttrame is activated.
    [0014] B13003 - BD14824 - D106607-01 20 The control block 224 receives a clk clock signal, a Row Ad row address signal, a Colad column address signal, a write enable signal , a non-volatile cell selection signal stte, a volatile cell selection signal sre, a save backup signal, and a restore signal restore. The operation of memory 700 will now be described with reference to FIG. 8. FIG. 8 is a timing diagram illustrating examples of signals clk, cave; restore, blprechn, wlsrame, wlsttrame, rsrdec0, rsttdec0, wdec0, svrte, rdstte, ampe, comp, wrt, q, dint stt and dint sr, in the memory array 700 of FIG. 7A during a save operation and an operation of restoration between the volatile and nonvolatile memory cells of the COLO column of Figure 7A. The signal dint_stt corresponds to the data stored by the non-volatile memory cell 204 and the signal dint sr corresponds to the data stored by the volatile memory cell 202. During the backup and restore operations, the signal svrte is high, from so that the data written in the memory cells are the internal data dint that were read in the memory cells. The save operation is triggered by a high value of the signal save, and begins with a read operation of the data dint sr stored by the volatile memory cell. The blprechn signal is initially low to pre-load the BL and BLB bit lines. The blprechn signal then goes high, the wlsrame signal goes high to activate the WL1 signal and select the volatile memory cell, and rsrdec0 goes high to couple the bit lines of the column. COLO at the inputs of the comparator 710. The synchronization signal compe then goes high to store the data signal in the flip-flop 712. On the falling edge of the signal compe, the signal q passes to the volatile cell data signal dint sr.
    [0015] B13003 - BD14824 - D106607-01 21 The save operation then involves a write operation in the nonvolatile cell. Thus the signals wlsttrame and wdec0 are high, and the write signal wrt then goes high. After a write time twnv, the write signal wrt goes low, and the data dint stt stored by the nonvolatile memory cell becomes equal to the volatile data dint sr. The restore operation is triggered by a high value of the restoration signal, and begins with a read operation of the data dint_stt, stored by the nonvolatile memory cell. The wlsttrame signal then goes high to enable the WL2 signal and selects the nonvolatile memory cell, and rsttdec0 goes high to couple the bit lines to the ground and the rsttrdl read data line. . The synchronization signal ampe then goes high to enable the voltage clamp 714 and the amplifier 716, and the synchronization signal compe then goes high to store the data signal in the flip-flop 712. On the falling edge of the signal compe, the signal q passes to the nonvolatile cell data signal dint stt. The restore operation then involves a write operation in the volatile cell. Thus the signals wlsrame and wdec0 are high and the write signal wrt also goes high. After a write time twv, which is for example shorter than the write time twnv of the nonvolatile cell, the writing signal wrt goes to the low state, and the data dint sr stored by the cell of non-volatile memory becomes equal to the non-volatile data dint stt.
    [0016] An advantage of the embodiments described here is that, by providing in the same memory array volatile memory cells and nonvolatile memory cells associated with the volatile cells, the volatile cells provide fast access times, and the matrix memory can have a relatively small area. In particular, a common reading and / or writing circuit can be provided for the volatile and nonvolatile memory cells, and thus each memory cell can be implemented with relatively few transistors and none. sense amplifier.
    [0017] With the description thus made of at least one illustrative embodiment, various alterations, modifications and improvements will readily occur to those skilled in the art. For example, it will be clear to those skilled in the art that the VDD supply voltage in the various embodiments could be at any level, for example between 1 and 3 V, and rather than being at OV. , the ground voltage could also be considered as a supply voltage that could have any level as a negative level. In addition, it will be clear to those skilled in the art that in all the embodiments described herein, all NMOS transistors could be replaced by PMOS transistors and / or all PMOS transistors could be replaced by NMOS transistors. . The manner in which all of these circuits could be implemented using only PMOS transistors or only NMOS transistors will be readily apparent to those skilled in the art. In addition, although transistors based on MOS technology have been described here, in alternative embodiments other transistor technologies, such as bipolar technology, could be used.
    [0018] In addition, it will be clear to those skilled in the art that the various elements described in connection with the various embodiments could be combined, in alternative embodiments, in any combinations.
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. Memory matrix comprising: a plurality of memory cells. volatile (202-) each comprising a flip-flop (206, 208); and a plurality of non-volatile memory cells (204) each comprising at least one resistive element (218, 218A, 218B) programmable by the direction of a current being passed therethrough to take one of at least two resistive states (Rmin, Rmax), each of the nonvolatile memory cells being associated with the corresponding one of the volatile memory cells.
    [0002]
    The memory array of claim 1, further comprising a read / write circuit (222) having a comparator (710) adapted to read a nonvolatile stored data signal.
    [0003]
    The memory array as claimed in claim 2, in each of the volatile memory cells and wherein the read / write circuit is coupled to each of the volatile and nonvolatile memory cells via one or more pairs of memory lines. bit (BL, BLB). 20
    [0004]
    Memory matrix according to claim 2 or 3, wherein the read / write circuit (222) is adapted to perform at least one of the following operations read a first data bit stored by a first of the volatile memory cells and programming, on the basis of the first data bit, the resistive state of a first one of the nonvolatile memory cells associated with the first volatile memory cell; and reading in a second nonvolatile memory cell, a programmed resistive state representing a second data bit and writing the second data bit in a second of the volatile memory cells associated with the second nonvolatile memory cell.
    [0005]
    Memory matrix according to claim 4, wherein the comparator has first and second inputs, and wherein the read / write circuit (222) further comprises at least one adapted multiplexer (704). coupling the first and second inputs of the comparator to complementary storage nodes (210, 212) of the first volatile memory cell to read the first data bit, and coupling the first and second inputs of the comparator to outputs of the first an amplifier (716) adapted to detect the programmed resistive state of the second non-volatile memory cell.
    [0006]
    The memory array of any one of claims 2 to 5, wherein the read / write circuit further comprises: a write circuit (706) adapted to write a given bit in a first one of the memory cells volatile by applying a voltage between complementary storage nodes (210, 212) of the first volatile memory cell and programming a resistive state of a first one of the non-volatile memory cells by passing a current through the resistive element (218, 218A, 218B) of the first nonvolatile memory cell.
    [0007]
    The memory array of any one of claims 1 to 6, further comprising a plurality of select lines (WL1), and wherein: each of the volatile memory cells and its associated non-volatile memory cell is coupled to the same selection line (WL1) of the memory array.
    [0008]
    The memory array of any one of claims 1 to 7, wherein each of the volatile memory cells (202) and its associated non-volatile memory cell (204) are coupled to a same pair of bit lines (BL , BLB).
    [0009]
    The memory array of any one of claims 1 to 7, wherein each of the volatile memory cells (202) is coupled to a first pair of bit lines (BL1, BL1B) and wherein each of the non-volatile memory cells is coupled to a second pair of bit lines (BL2, BLB2).
    [0010]
    A memory array as claimed in any one of claims 1 to 9, wherein each of the volatile memory cells (202) is coupled to a supply voltage rail (610) coupled via a switch (612). ) at a supply voltage level.
    [0011]
    A memory array according to any one of claims 1 to 10, wherein each of the nonvolatile memory cells (204) comprises a single resistive element (218) coupled in series with a first transistor (220) between a pair of lines bit (BL, BLB).
    [0012]
    The memory array of any one of claims 1 to 10, wherein each of the nonvolatile memory cells (204) comprises: a first resistive element (218A) coupled in series with a first transistor (220A) between a first bit line (BL) and a first supply voltage; and a second resistive element (218B) coupled in series with a second transistor (218B) between a second bit line (BLB) and the first supply voltage.
    [0013]
    The memory array of any one of claims 1 to 12, wherein said at least one resistive element (218, 218A, 218B) of each of the non-volatile memory cells (204) is of one of the following types : a spin transfer torque element having anisotropy in the plane; a spin transfer torque element having anisotropy perpendicular to the plane; and a redox element (RedOx).
    [0014]
    A method of saving data in the memory array according to any one of claims 1 to 13, the method comprising: reading a first data bit stored by a first of the volatile memory cells; and programming the resistive state of a first one of the non-volatile memory cells associated with the first volatile memory cell based on the first data bit.
    [0015]
    A method of restoring data in the memory array of any one of claims 1 to 13, the method comprising: reading in a second nonvolatile memory cell a programmed resistive state representing a second data bit; and writing the second data bit into a second one of the volatile memory cells associated with the second nonvolatile memory cell.
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    同族专利:
    公开号 | 公开日
    EP3092647B1|2019-04-10|
    FR3016465B1|2017-09-08|
    EP3092647A1|2016-11-16|
    WO2015104297A1|2015-07-16|
    US9620212B2|2017-04-11|
    US20160329100A1|2016-11-10|
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    法律状态:
    2016-01-25| PLFP| Fee payment|Year of fee payment: 3 |
    2017-01-31| PLFP| Fee payment|Year of fee payment: 4 |
    2018-01-31| PLFP| Fee payment|Year of fee payment: 5 |
    2020-01-30| PLFP| Fee payment|Year of fee payment: 7 |
    2021-10-08| ST| Notification of lapse|Effective date: 20210905 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1450196A|FR3016465B1|2014-01-10|2014-01-10|MEMORY HAVING VOLATILE MEMORY CELLS AND NONVOLATILE ASSOCIATED THERETO|FR1450196A| FR3016465B1|2014-01-10|2014-01-10|MEMORY HAVING VOLATILE MEMORY CELLS AND NONVOLATILE ASSOCIATED THERETO|
    US15/110,710| US9620212B2|2014-01-10|2015-01-07|Memory provided with associated volatile and non-volatile memory cells|
    EP15702382.1A| EP3092647B1|2014-01-10|2015-01-07|Memory provided with associated volatile and non-volatile memory cells|
    PCT/EP2015/050177| WO2015104297A1|2014-01-10|2015-01-07|Memory provided with associated volatile and non-volatile memory cells|
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